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| BF961 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features * * * * * * Integrated gate protection diodes High cross modulation performance Low noise figure High AGC-range Low feedback capacitance Low input capacitance 2 3 4 1 G2 G1 D S Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Electrostatic sensitive device. Observe precautions for handling. 13625 Mechanical Data Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Part BF961 BF961A BF961B Ordering Ccode BF961A or BF961B BF961A BF961B BF961 BF961 BF961 Marking TO50 TO50 TO50 Package Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Tamb 60 C Test condition Symbol VDS ID IG1/G2SM Ptot TCh Tstg Value 20 30 10 200 150 - 55 to + 150 Unit V mA mA mW C C Maximum Thermal Resistance Parameter Channel ambient 1) 1) Test condition Symbol RthChA Value 450 Unit K/W on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 m Cu www.vishay.com 1 Document Number 85002 Rev. 1.5, 25-Nov-04 BF961 Vishay Semiconductors Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Parameter Drain - source breakdown voltage Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Test condition ID = 10 A, - VG1S = - VG2S = 4 V IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 Part Symbol V(BR)DS V(BR)G1SS V(BR)G2SS IG1SS IG2SS IDSS IDSS IDSS - VG1S(OFF) - VG2S(OFF) 4 4 9.5 BF961A BF961B Gate 1 - source cut-off voltage Gate 2 - source cut-off voltage VDS = 15 V, VG2S = 4 V, ID = 20 A VDS = 15 V, VG1S = 0, ID = 20 A Min 20 8 8 Typ. VISHAY Max Unit V 14 14 100 100 20 10.5 20 3.5 3.5 V V nA nA mA mA mA V V Gate 1 - source leakage current VG1S = 5 V, VG2S = VDS = 0 Gate 2 - source leakage current VG2S = 5 V, VG1S = VDS = 0 Drain current VDS = 15 V, VG1S = 0, VG2S = 4 V BF961 Electrical AC Characteristics Tamb = 25 C, unless otherwise specified VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz Parameter Forward transadmittance Gate 1 input capacitance Gate 2 input capacitance Feedback capacitance Output capacitance Power gain AGC range Noise figure GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG2S = 4 to - 2 V, f = 200 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz VG1S = 0, VG2S = 4 V Test condition Symbol | y21s | Cissg1 Cissg2 Crss Coss Gps Gps F Min 12 Typ. 15 3.7 1.6 25 1.6 20 50 1.8 2.5 Max Unit mS pF pF fF pF dB dB dB Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 250 ID - Drain Current ( mA) Ptot -Total Power Dissipation ( mW ) 22 20 18 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 96 12160 V G1S = 0.6 V 0.4 V 0.2 V 0 -0.2 V -0.4 V -0.6 V -0.8 V 0 2 4 6 8 10 12 14 16 18 20 22 24 V DS - Drain Source Voltage ( V ) 200 150 100 50 0 Tamb - Ambient Temperature ( C ) 96 12159 Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Drain Current vs. Drain Source Voltage www.vishay.com 2 Document Number 85002 Rev. 1.5, 25-Nov-04 VISHAY BF961 Vishay Semiconductors 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 Cissg2 - Gate 2 Input Capacitance ( pF ) Y21S - ForwardTransadmittance ( mS ) 4.0 3.6 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.0 -2 -1 0 12 34 56 7 V G2S - Gate 2 Source Voltage ( V ) V DS = 15 V V G1S = 0 f = 1 MHz V DS = 15 V I DS = 10 mA V G1S = 0.5 V 0V -0.5 V 96 12161 -1 0 1 2 3 4 5 6 V G2S - Gate 2 Source Voltage ( V ) 96 12164 Figure 3. Forward Transadmittance vs. Gate 2 Source Voltage Figure 6. Gate 2 Input Capacitance vs. Gate 2 Source Voltage Y21S - ForwardTransadmittance ( mS ) 20 18 16 14 12 10 8 6 4 2 V DS = 15 V f = 1 MHz Coss - Output Capacitance ( pF ) 22 V G2S = 5 V 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 2 4 6 8 10 12 14 16 18 20 22 V G2S = 4 V f = 1 MHz 4V 0V 3V 2V 1V 0 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 V G1S - Gate 1 Source Voltage ( V ) 96 12162 96 12165 V DS - Drain Source V oltage ( V ) Figure 4. Forward Transadmittance vs. Gate 1 Source Voltage Figure 7. Output Capacitance vs. Drain Source Voltage Cissg1 - Gate 1 Input Capacitance ( pF ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 V DS = 15 V V G2S = 4 V f = 1 MHz 18 16 14 Im ( y11) ( mS ) f =700 MHz 600 MHz 500 MHz 400 MHz 12 10 8 6 4 2 0 0 1 2 3 4 300 MHz 200 MHz 100 MHz V DS = 15 V V G2S = 4 V I D = 5...20 mA f = 50...700 MHz 5 6 7 8 9 10 0.0 -2.0-1.5-1.0-0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 96 12163 V G1S - Gate 1 Source Voltage ( V ) 96 12166 Re (y 11) ( mS ) Figure 5. Gate 1 Input Capacitance vs. Gate 1 Source Voltage Figure 8. Short Circuit Input Admittance Document Number 85002 Rev. 1.5, 25-Nov-04 www.vishay.com 3 BF961 Vishay Semiconductors VISHAY 10 5 0 Im ( y 21 ) ( mS ) V DS = 15 V V G2S = 4 V f = 50...700 MHz I D = 5 mA 10 mA 20 mA f = 50 MHz 100 MHz 200 MHz 300 MHz -5 -10 -15 -20 -25 400 MHz 500 MHz 600 MHz 700 MHz -30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 96 12167 Re (y 21) ( mS ) Figure 9. Short Circuit Forward Transfer Admittance 7.0 6.5 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.0 f = 700 MHz 600 MHz 500 MHz 400 MHz 300 MHz 200 MHz 100 MHz 0.2 0.4 0.6 I D = 20 mA V DS = 15 V V G2S = 4 V I D = 5...20 mA f = 50...700 MHz 0.8 1.0 1.2 1.4 Im ( y22 ) ( mS ) I D = 5 mA 96 12168 Re (y 22 ) ( mS ) Figure 10. Short Circuit Output Admittance www.vishay.com 4 Document Number 85002 Rev. 1.5, 25-Nov-04 VISHAY VDS = 15 V, ID = 5 to 20 mA, VG2S = 4 V, Z0 = 50 S11 j j0.5 j2 150 j0.2 j5 300 180 700 MHz 600 0.04 0.08 30 BF961 Vishay Semiconductors S12 90 120 60 0 0.2 0.5 1 2 5 100 50 0 -j0.2 700 MHz -j0.5 500 300 -j2 -j5 -150 -30 -120 12921 -60 -90 12920 -j Figure 11. Input Reflection Coefficient Figure 13. Reverse Transmission Coefficient S21 ID= 20 mA ID= 10 mA ID= 5 mA 200 50 180 700MHz 0.8 1.6 0 400 30 90 120 60 S22 j j0.5 j2 j0.2 j5 i 100 300 500 -j5 700 MHz 2 5 -j2 -j 0 0.2 0.5 1 -150 -30 -j0.2 -120 12922 -60 -90 12923 -j0.5 Figure 12. Forward Transmission Coefficient Figure 14. Output Reflection Coefficient Document Number 85002 Rev. 1.5, 25-Nov-04 www.vishay.com 5 BF961 Vishay Semiconductors Package Dimensions in mm VISHAY 96 12242 www.vishay.com 6 Document Number 85002 Rev. 1.5, 25-Nov-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. BF961 Vishay Semiconductors 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85002 Rev. 1.5, 25-Nov-04 www.vishay.com 7 |
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